VSOP584..

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 11-Jan-12

2

Document Number: 82444

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.

Fig. 1 - Testsignal

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Supply voltage

Pin 2

- 0.3 to + 6

V

Supply current

Pin 2

5mA

Output voltage

Pin 3

V

Output sink current

Pin 3

5mA

Power dissipation

≤ 85 °C

10

mW

Operating temperature range

- 25 to + 85

°C

Storage temperature range

- 25 to + 85

°C

ESD stress, HBM

Pin 2, pin 3, MIL-STD-883C

2000

V

Pin 7, MIL-STD-883C

500

V

ESD stress, MM

Pin 2, pin 3, MIL-STD-883C

200

V

Pin 7, MIL-STD-883C

100

V

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply voltage

2.7

5.5

V

Supply current (pin 2)

0.65

0.85

1.05

mA

Output voltage low (pin 3)

100

mV

Output voltage high (pin 3)

V

Internal pull up resistor

(pin 2, pin 3)

33

k

Ω

Max. input DC current

400

μA

Min. signal detection current

700

1000

pA

510

nA

Output pulse width

testsignal see fig. 1, BER

≤ 2%

μs

Accuracy of bandpass center

frequency

kHz

Bandwidth of bandpassfilter

B

3.8

kHz

burst length t

pI

output pulse width t

po

I

IN

V

OUT

one carrier cycle 1/f

C

burst length of input signal t

pi

output pulse width t

po

I

IN

V

OUT

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