SiHU3N50D

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Vishay Siliconix

S12-0689-Rev. A, 02-Apr-12

6

Document Number: 91493

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 18 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

V

a

I

SD

Driver gate drive

D.U.T. l

D.U.T. V

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

• I

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

V

DD