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1N5820 Datasheet(PDF) 1 Page - Shanghai Sunrise Electronics |
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1N5820 Datasheet(HTML) 1 Page - Shanghai Sunrise Electronics |
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1 / 1 page SHANGHAI SUNRISE ELECTRONICS CO., LTD. VOLTAGE: 20 TO 40V CURRENT: 3.0A FEATURES • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250 oC/10sec/0.375"(9.5mm) lead length at 5 lbs tension MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: Color band denotes cathode • Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL UNITS Maximum Repetitive Peak Reverse Voltage VRRM V Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage VDC V Maximum Average Forward Rectified Current (9.5mm lead length, at TL=95 oC) Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) Maximum Forward Voltage (at 3.0A DC) VF V Maximum DC Reverse Current Ta=25 oC mA (at rated DC blocking voltage) Ta=100 oC mA Typical Junction Capacitance (Note 1) CJ pF Typical Thermal Resistance (Note 2) Rθ(ja) oC/W Storage and Operation Junction Temperature TSTG,TJ oC Note: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted http://www.sse-diode.com 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25 oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS 1N5820 1N5821 1N5822 20 30 40 14 21 28 20 30 40 IF(AV) 3.0 IR 2.0 10.0 A IFSM 80 A 250 40 -65 to +125 0.475 0.5 0.525 TECHNICAL SPECIFICATION DO - 201AD Dimensions in inches and (millimeters) |
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