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FGW30N120HD Datasheet(PDF) 2 Page - Fuji Electric

Part # FGW30N120HD
Description  Discrete IGBT (High-Speed V series) 1200V / 30A
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FGW30N120HD Datasheet(HTML) 2 Page - Fuji Electric

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Discrete IGBT
FGW30N120HD
http://www.fujielectric.com/products/semiconductor/
3
FWD Characteristics
Description
Symbol
Conditions
Characteristics
Unit
min.
typ.
max.
Forward Voltage Drop
VF
IF=20A
Tj=25°C
-
2.2
2.8
V
Tj=175°C
-
1.8
-
V
Diode Reverse Recovery Time
trr1
VCC=30V,IF = 2.0A
-di/dt=200A/μs
-
42
55
ns
Diode Reverse Recovery Time
trr2
VCC=600V
IF=20A
-diF/dt=200A/µs
Tj=25°C
0.38
-
μs
Diode Reverse Recovery Charge
Qrr
-
0.95
-
μC
Diode Reverse Recovery Time
trr2
VCC=600V
IF=20A
-diF/dt=200A/µs
Tj=175°C
-
0.66
-
μs
Diode Reverse Recovery Charge
Qrr
-
4.5
-
μC
Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Thermal Resistance, Junction-Ambient
Rth(j-a)
-
-
-
50
°C/W
Thermal Resistance, IGBT Junction to Case
Rth(j-c)_IGBT
-
-
-
0.568
Thermal Resistance, FWD Junction to Case
Rth(j-c)_FWD
-
-
-
1.191


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