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http://www.fujielectric.com/products/semiconductor/

2MBI600VXA-120E-50

IGBT Modules

IGBT MODULE (V series)

1200V / 600A / 2 in one package

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplifier

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Items

Symbols

Conditions

Maximum ratings

Units

Collector-Emitter voltage

1200

V

Gate-Emitter voltage

±20

V

Collector current

Ic

Continuous

Tc=25°C

800

A

Tc=100°C

600

Ic pulse

1ms

1200

-Ic

600

-Ic pulse

1ms

1200

Collector power dissipation

Pc

1 device

3350

W

Junction temperature

Tj

175

°C

150

Case temperature

150

Storage temperature

Tstg

-40 ~ +150

AC : 1min.

4000

VAC

between thermistor and others (*2)

Screw torque (*3)

Mounting

-

M5

6.0

N m

Main Terminals

M8

10.0

Sense Terminals

M4

2.1

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable Value : Mounting

3.0 ~ 6.0 Nm (M5)

Recommendable Value : Main Terminals

8.0 ~ 10.0 Nm (M8)

Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Items

Symbols

Conditions

Characteristics

Units

min.

typ.

max.

Zero gate voltage collector current

-

-

4.0

mA

Gate-Emitter leakage current

-

-

800

nA

Gate-Emitter threshold voltage

6.0

6.5

7.0

V

Collector-Emitter saturation voltage

(terminal)

(*4)

Tj=25°C

-

1.85

2.30

V

Tj=125°C

-

2.15

-

Tj=150°C

-

2.20

-

(chip)

Tj=25°C

-

1.75

2.20

Tj=125°C

-

2.05

-

Tj=150°C

-

2.10

-

Input capacitance

Cies

-

55

-

nF

Turn-on time

ton

-

1.00

-

µs

tr

-

0.40

-

tr (i)

-

0.15

-

Turn-off time

toff

-

1.20

-

tf

-

0.15

-

Forward on voltage

(terminal)

(*4)

Tj=25°C

-

1.80

2.25

V

Tj=125°C

-

1.95

-

Tj=150°C

-

1.90

-

(chip)

Tj=25°C

-

1.70

2.15

Tj=125°C

-

1.85

-

Tj=150°C

-

1.80

-

Reverse recovery time

trr

-

0.20

-

µs

Resistance

R

T=25°C

-

5000

-

Ω

T=100°C

465

495

520

B value

B

T=25/50°C

3305

3375

3450

K

Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.

Thermal resistance characteristics

Items

Symbols

Conditions

Characteristics

Units

min.

typ.

max.

Thermal resistance (1device)

Rth(j-c)

Inverter IGBT

-

-

0.045

°C/W

Inverter FWD

-

-

0.075

Contact thermal resistance (1device) (*5)

Rth(c-f)

with Thermal Compound

-

0.0125

-

Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.