2MBI600U4G-120 datasheet(2/6 Pages) FUJI

Part #	2MBI600U4G-120

Description	IGBT MODULE (U series) 1200V / 600A / 2 in one package

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Manufacturer	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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IGBT Modules

2MBI600U4G-120

http://www.fujielectric.com/products/semiconductor/

3

Characteristics (Representative)

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25°C

Dynamic Gate charge (typ.)

VCC=600V, IC=600A, Tj= 25°C

Tj=25ºC,chip

VGE=+15V,chip

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C, chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

0

200

400

600

800

1000

1200

1400

0.0

1.0

2.0

3.0

4.0

5.0

Collector-Emitter voltage : VCE [V]

VGE=20V 15V

12V

10V

8V

0

200

400

600

800

1000

1200

1400

0.0

1.0

2.0

3.0

4.0

5.0

Collector-Emitter voltage : VCE [V]

VGE=20V 15V

12V

10V

8V

0

200

400

600

800

1000

1200

1400

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Collector-Emitter voltage : VCE [V]

Tj=125°C

Tj=25°C

0

2

4

6

8

10

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

Ic=1200A

Ic=600A

Ic=300A

1

10

100

1000

0

10

20

30

Collector-Emitter voltage : VCE [V]

Cies

Coes

Cres

0

200

400

600

800

1000

0

500

1000

1500

2000

2500

3000

Gate charge : Qg [ nC ]

0

5

10

15

20

25

VCE

VGE

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