100

1000

10000

100000

1000000

110

120

130

140

150

160

170

180

190

200

210

220

Output Load = 10 mA

Output Load = 25 mA

Output Load = 35 mA

THS4521-HT

www.ti.com

SBOS548D – APRIL 2011 – REVISED MAY 2012

differential output, input and output referenced to midsupply, unless otherwise noted.

-55°C to 125°C

175°C

-55°C to 210°C

TEST

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

Slew Rate

49

39

39

V/

μs

C

Gain

0.97

0.99

1.02

0.97

1

1.03

0.97

1

1.03

V/V

A

Common-Mode Offset

±0.2

±4

±0.7

±0.7

±10

mV

A

Input

±0.5 V

Input Bias Current

±0.9

±2.73

±0.27

±2.75

±0.91

±2.75

μA

A

0.8 to

0.8 to

0.8 to

1.01

2.3

1.09

2.3

V

A

2.5

2.5

2.5

114

∥3.

148

∥3.

148

∥3.

Input Impedance

k

Ω∥pF

C

6

7

7

Default Output

Common-Mode Voltage

±0.3

±5

±0.6

±10

±0.6

±10

mV

A

Offset from

(1)

See data sheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

(3)

The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characteristics.

(4)

Device is qualified to ensure reliable operation for 1000 hours at maximum rated temperature. This includes, but is

not limited to temperature bake, temperature cycle, electromigration, bond intermetallic life, and mold compound life.

Such qualification testing should not be viewed as justifying use of this component beyond specified performance and

environmental limits. For plastic package only.

Figure 1. THS4521SHKJ/SHKQ/SKGD1 Operating Life Derating Chart

Copyright © 2011–2012, Texas Instruments Incorporated

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