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MSFC25 Datasheet(PDF) 2 Page - Microsemi Corporation |
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MSFC25 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page  MSFC25 MSFC25 – Rev 0 www.microsemi.com Oct, 2011 2/4 ◆ Thyristor Maximum Ratings Thermal Characteristics Symbol Item Conditions Values Units Rth(j-c) Thermal Impedance, max. Junction to Case 0.90 ℃ /W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.20 ℃ /W Electrical Characteristics Symbol Item Conditions Values Units ITAV Average On-State Current Sine 180 o;Tc=85℃ 25 A ITSM Surge On-State Current TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 550 480 A i 2t Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1150 A2s Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V Tvj Operating Junction Temperature -40 to +125 ℃ Tstg Storage Temperature -40 to +125 ℃ Mt Mounting Torque To terminals(M5) 3±15% Nm Ms To heatsink(M6) 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s 2 Values Symbol Item Conditions Min. Typ. Max. Units VTM Peak On-State Voltage, max. T=25℃ IT =75A 1.80 V IRRM/IDRM Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. TVJ=TVJM ,VR=VRRM ,VD= VDRM 10 mA VTO On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.9 V rT Value of on-state slope resistance. max TVJ =TVJM 12 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 2.5 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V IGD Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 5 mA IL Latching current, max. TVJ =25℃ , RG = 33 Ω 250 400 mA IH Holding current, max. TVJ =25℃ , VD =6V 100 200 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us 1 us tq Circuit commutated turn-off time TVJ =TVJM 80 us |
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Similar Description - MSFC25 |
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