ISO7420-Q1

ISO7421A-Q1

SLLSE14A – MARCH 2012 – REVISED JUNE 2012

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PIN FUNCTIONS

PIN

NO.

I/O

DESCRIPTION

NAME

ISO7420

ISO7421A

INA

2

7

I

Input, channel A

INB

3

3

I

Input, channel B

GND1

4

4

–

GND2

5

5

–

OUTA

7

2

O

Output, channel A

OUTB

6

6

O

Output, channel B

2

1

–

8

8

–

INPUT SIDE

OUTPUT SIDE

INPUT

OUTPUT

VCC

VCC

IN

OUT

H

H

PU

PU

L

L

Open

H

PD

PU

X

H

(1)

X = Irrelevant, H = High level, L = Low level

ABSOLUTE MAXIMUM RATINGS

(1)

–0.5 V to 6 V

Voltage at IN, OUT

–0.5 V to 6 V

Output current

±15 mA

Human-body model (HBM) AEC-Q100 Classification Level H3A

4 kV

Electrostatic

ESD

Charged-device model (CDM) AEC-Q100 Classification Level C5

All pins

1.5 kV

discharge

Machine model (MM)

200 V

150°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.

RECOMMENDED OPERATING CONDITIONS

MIN

TYP MAX

UNIT

Supply voltage

3

5.5

V

High-level output current

–4

mA

Low-level output current

4

mA

High-level input voltage

2

V

Low-level input voltage

0

0.8

V

Operating temperature

–40

125

°C

2

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