Charge

Pump and

Gate Drive

Regulator

Thermal

Shutdown

AOUT1

AOUT2

BOUT1

BOUT2

GND

ABVREF

0.1 F

16 V

μ

0.01 μF

35 V

24 V

24 V

24 V

24 V

24 V

VM

CP1

CP2

VCP

AISEN

BISEN

VCP

OCP

VM

Oscillator

COUT1

COUT2

DOUT1

DOUT2

Step

Motor

Step

Motor

VM

CISEN

DISEN

VM

UVLO

RESET

VGD

SDATA

SCLK

SCS

SSTB

RESETn

SLEEPn

Dig.

VCC

V3P3

3.3 V

Regulator

0.47 F

6.3 V

μ

CDVREF

Serial

Interface

and

Logic

PWM H-Bridge

Driver A

PWM H-Bridge

Driver B

PWM H-Bridge

Driver C

PWM H-Bridge

Driver D

DRV8823-Q1

SLVSBH2A – JUNE 2012 – REVISED JULY 2012

www.ti.com

FUNCTIONAL BLOCK DIAGRAM

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

2

Submit Documentation Feedback

Copyright © 2012, Texas Instruments Incorporated

Product Folder Link(s): DRV8823-Q1