MCM69Q618

5

MOTOROLA FAST SRAM

Rating

Symbol

Value

Unit

Power Supply Voltage

VDD

– 0.5 to + 4.6

V

Voltage Relative to VSS for Any Pin

Except VDD

Vin, Vout

– 0.5 to VDD + 0.5

V

Output Current

Iout

± 20

mA

Power Dissipation

PD

TBD

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

Rating

Symbol

TQFP

Unit

Notes

Junction to Ambient (@ 200 lfm)

Single Layer Board

Four Layer Board

R

θJA

40

25

°C/W

2

Junction to Board (Bottom)

R

θJB

17

°C/W

3

Junction to Case (Top)

R

θJC

9

°C/W

4

NOTES:

1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient

temperature, air flow, board population, and board thermal resistance.

2. Per SEMI G38–87.

3. Indicates the average thermal resistance between the die and the printed circuit board.

4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).

This is a synchronous device. All synchro-

nous inputs must meet specified setup and hold

times with stable logic levels for

ALL rising

edges of clock (K) while the device is selected.

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to these high–impedance

circuits.