DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

2 of 7

www.diodes.com

September 2011

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A Product Line of

Diodes Incorporated

DMN2300UFD

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

Steady

State

1.73

A

1.34

1.21

Pulsed Drain Current (Note 6)

6.0

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 4)

0.96

W

(Note 5)

0.47

W

Thermal Resistance, Junction to Ambient

(Note 4)

130

°C/W

(Note 5)

265

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Same as note 4, except the device is mounted on minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

Thermal Characteristics

0

1

2

3

4

5

6

7

8

9

10

0.0001 0.001

0.01

0.1

1

10

100

1000

t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

Single Pulse

R

= 136 C/W

θJA

°

R

(t) = R

*r(t)

T - T = P*R

θθ

θ

JA

JA

JA

JA

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Operation Area

0.01

0.1

1

10

0.001

I (

A)

@

P

=1

0s

D

W

I (

A)

@

DC

D

I (

A)

@

P

=1

s

D

W

I (

A)

@

P

=1

00

ms

D

W

I (

A)

@

P

=1

0m

s

D

W

T

= 150 C

T= 25 C

Single Pulse

J(MAX)

A

°

°

R

Limited

DS(ON)

I(A) @P =1ms

DW

I(A) @

P =10µs

D

W

I

(A

) @

P

=1

00

µs

D

W