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CY62177DV30LL-55BAXI Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY62177DV30LL-55BAXI
Description  32-Mbit (2 M 횞 16) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62177DV30LL-55BAXI Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY62177DV30 MoBL®
Document Number : 38-05633 Rev. *G
Page 8 of 13
Figure 4. Write Cycle 1 (WE Controlled)[21, 22, 23, 24, 25]
Figure 5. Write Cycle 2 (CE Controlled)[21, 22, 23, 24, 25]
Notes
21. Data I/O is high impedance if OE = VIH.
22. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high-impedance state.
23. During this period, the I/Os are in output state and input signals should not be applied.
24. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.
25. The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of
these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write.
Switching Waveforms[16] (continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
VALID DATA IN
CE
ADDRESS
WE
DATA I/O
OE
BHE
/BLE
t
BW
See Note 23
t
HD
t
SD
tPWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
VALID DATA IN
CE
ADDRESS
WE
DATA I/O
OE
See Note 23
BHE/BLE
t
BW
tSA


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