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MCM69P818 Datasheet(PDF) 8 Page - Motorola, Inc |
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MCM69P818 Datasheet(HTML) 8 Page - Motorola, Inc |
8 / 16 page MCM69P818 8 MOTOROLA FAST SRAM DC CHARACTERISTICS AND SUPPLY CURRENTS Parameter Symbol Min Typ Max Unit Notes Input Leakage Current (0 V ≤ Vin ≤ VDD) Ilkg(I) — — ± 1 µA Output Leakage Current (0 V ≤ Vin ≤ VDD) Ilkg(O) — — ± 1 µA AC Supply Current (Device Selected, MCM69P818–3.5 All Outputs Open, Freq = Max) MCM69P818 –3.8 IDDA — — — — 425 400 mA 1, 2, 3 All Outputs Open, Freq = Max) MCM69P818 –3.8 Includes VDD Only MCM69P818–4 — — — — 400 375 CMOS Standby Supply Current (Device Deselected, Freq = 0, VDD = Max, All Inputs Static at CMOS Levels) ISB2 — — 45 mA 4, 5 TTL Standby Supply Current (Device Deselected, Freq = 0, VDD = Max, All Inputs Static at TTL Levels) ISB3 — — 50 mA 4, 6 Clock Running (Device Deselected, MCM69P818–3.5 Freq = Max, VDD = Max, MCM69P818 –3.8 ISB4 — — — — 190 180 mA 4, 5 Freq = Max, VDD = Max, MCM69P818–3.8 All Inputs Toggling at CMOS Levels) MCM69P818–4 — — — — 180 165 Static Clock Running (Device Deselected, Freq = Max, VDD = Max, All Inputs Static at TTL Levels) ISB5 — — 95 mA 4, 6 Output Low Voltage (IOL = 2 mA), VDDQ = 2.5 V VOL — — 0.7 V Output High Voltage (IOH = – 2 mA), VDDQ = 2.5 V VOH 1.7 — — V Output Low Voltage (IOL = 8 mA), VDDQ = 3.3 V VOL2 — — 0.4 V Output High Voltage (IOH = – 4 mA), VDDQ = 3.3 V VOH2 2.4 — — V NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing. 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. 4. Device in deselected mode as defined by the Truth Table. 5. CMOS levels for I/O’s are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V. 6. TTL levels for I/O’s are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH. CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested) Parameter Symbol Min Typ Max Unit Input Capacitance Cin — 4 5 pF Input/Output Capacitance CI/O — 7 8 pF |
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