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MAX17605ASA+ Datasheet(PDF) 2 Page - Maxim Integrated Products |
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MAX17605ASA+ Datasheet(HTML) 2 Page - Maxim Integrated Products |
2 / 12 page MAX17600–MAX17605 4A Sink /Source Current, 12ns, Dual MOSFET Drivers 2 VDD, INA, INB, ENA, ENB to GND........................-0.3V to +16V OUTA, OUTB to GND............................................-0.3V to +16V Junction Operating Temperature Range ......... -40NC to +125NC Continuous Power Dissipation (TA = +70NC) 8-Pin TDFN (derate 23.8mW/NC above +70NC) ........1904mW 8-Pin SO (derate 74mW/NC above +70NC)............. 588.2mW* 8-Pin FMAX (derate 12.9mW/NC above +70NC) .....1030.9mW Operating Temperature Range........................ -40NC to +125NC Junction Temperature ................................................... +150NC Storage Temperature Range............................ -65NC to +150NC Lead Temperature (soldering, 10s) ................................+300NC Soldering Temperature (reflow) ......................................+240NC *As per JEDEC 51 standard. TDFN Junction-to-Ambient Thermal Resistance (BJA) ..........42NC/W Junction-to-Case Thermal Resistance (BJC) .................8NC/W SO Junction-to-Ambient Thermal Resistance (BJA) ........136NC/W Junction-to-Case Thermal Resistance (BJC) ...............38NC/W F MAX Junction-to-Ambient Thermal Resistance (BJA) .......77.6NC/W Junction-to-Case Thermal Resistance (BJC) .................5NC/W ABSOLUTE MAXIMUM RATINGS Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four- layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL CHARACTERISTICS (Note 1) ELECTRICAL CHARACTERISTICS (VDD = 12V, CL = 0F, at TA = -40NC to +125NC, unless otherwise noted. Typical values are specified at TA = +25NC. Parameters specified at VDD = 4V apply to the TTL versions only.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLY (VDD) VDD Operating Range VDD TTL versions 4 14 V HNM versions 6 14 VDD Undervoltage Lockout UVLO VDD rising 3 3.5 3.85 V VDD UVLO Hysteresis 200 mV VDD UVLO to OUT_ Delay VDD rising 120 F s VDD Supply Current IDD_Q Not switching, VDD = 14V (Note 3) 1 2 mA IDD_SW VDD = 4.5V, CL = 1nF, both channels switching at 1MHz 12 18 DRIVER OUTPUT (SOURCE) (OUTA, OUTB) Peak Output Current (Sourcing) IPK-P VDD = 14V, CL = 10nF (Note 3) 4 A Driver Output Resistance Pulling Up (Note 4) RON-P VDD = 14V, IOUT_ = 100mA 0.88 1.85 I VDD = 4V, IOUT_ = 100mA 0.91 1.95 DRIVER OUTPUT (SINK) (OUTA, OUTB) Peak Output Current (Sinking) IPK-N VDD = 14V, CL = 10nF (Note 3) 4 A Driver Output Resistance Pulling Down (Note 4) RON-N VDD = 14V, IOUT_ = -100mA 0.5 0.95 I VDD = 4V, IOUT_ = -100mA 0.52 1 |
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