MCM69F735

1

MOTOROLA FAST SRAM

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128K x 36 Bit Flow–Through

BurstRAM

™ Synchronous

Fast Static RAM

The MCM69F735 is a 4M bit synchronous fast static RAM designed to provide

a burstable, high performance, secondary cache for the PowerPC

™ and other

high performance microprocessors. It is organized as 128K words of 36 bits

each. This device integrates input registers, a 2–bit address counter, and high

speed SRAM onto a single monolithic circuit for reduced parts count in cache

data RAM applications. Synchronous design allows precise cycle control with the

use of an external clock (K).

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G) and linear burst order (LBO) are clock (K) controlled through positive–

edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM69F735 (burst sequence

operates in linear or interleaved mode dependent upon the state of LBO) and

controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls

DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte

writes SBx are asserted with SW. All bytes are written if either SGW is asserted

or if all SBx and SW are asserted.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

The MCM69F735 operates from a 3.3 V core power supply and all outputs

operate on a 3.3 V or 2.5 V power supply. All inputs and outputs are JEDEC stan-

dard JESD8–5 compatible.

• MCM69F735 Speed Options

Speed

tKHKH

Flow–Through

tKHQV

Setup

Hold

IDD

150 MHz

6.7 ns

6 ns

0.5 ns

1 ns

400 mA

133 MHz

7.5 ns

6.5 ns

0.5 ns

1 ns

375 mA

117 MHz

8.5 ns

7 ns

0.5 ns

1 ns

350 mA

• 3.3 V + 10%, – 5% Core Power Supply, Operates with a 3.3 V or 2.5 V I/O

Supply

• ADSP, ADSC, and ADV Burst Control Pins

• Selectable Burst Sequencing Order (Linear/Interleaved)

• Single–Cycle Deselect Timing

• Internally Self–Timed Write Cycle

• Byte Write and Global Write Control

• PB1 Version 2.0 Compatible

• JEDEC Standard 119–Pin PBGA Package

BurstRAM is a trademark of Motorola, Inc.

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Order this document

by MCM69F735/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MCM69F735

ZP PACKAGE

PBGA

CASE 999–01

5/23/97