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PA2423 Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc.

Part # PA2423
Description  2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
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Manufacturer  SIGE [SiGe Semiconductor, Inc.]
Direct Link  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

PA2423 Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc.

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PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
DC Electrical Characteristics
Conditions: V
CC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Input and Output externally matched to 5
0Ω ,unless otherwise noted.
Symbol
Note
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
3.0
3.3
3.6
V
ICC
1
Supply Current (ICC = IVCC0 + IVCC1 + IVCC2 )
120
150
mA
ICC
temp
3
Supply Current variation over temperature, (-4
0°C < TA <+85°C)
25
%
VCTL
PA Output Power Control Voltage Range
0
VCC
V
ICTL
1
Current sourced by VCTL Pin
200
250
µA
3
Logic High Voltage
2.0
V
VRAMP
3
Logic Low Voltage
0.8
V
Istby
1
Leakage Current when VRAMP = 0V
0.5
10
µA
AC Electrical Characteristics
Conditions: VCC0 =VCC1 =VCC2 =VRAMP =3.3V, VCTL =3.3V,PIN =+2 dBm, TA =25°C, f = 2.45GHz,
Input and Output externally matched to 5
0Ω, unless otherwise noted
Symbol
Note
Parameter
Min
.
Typ.
Max. Unit
fL-U
3
Frequency Range
240
0
2500
MHz
1
Output Power @ PIN =+2 dBm,VCTL = 3.3V
20.0
22.5
23.5
dBm
POUT
1
Output Power @ PIN =+2 dBm,VCTL =0.4V
-8
0
dBm
P
TEMP
3
POUT variation over temperature (-4
0°C <TA <+85°C), VCTL =3.3V
1
2
dB
dP OUT /dVCTL
3
Control Voltage Sensitivity
60
120
dBm/V
PAE
Power Added Efficiency at +22.5 dBm Output Power
47
%
GVAR
3
Gain Variation over band (2400-2500 MHz)
0.7
1
dB
2f, 3f, 4f, 5f
3,4
Harmonics
-35
-30
dBc
IS21IOFF
2
Isolation in “OFF” State, PIN =+2dBm,VRAMP =0V
20
25
dB
IS12 I
2
Reverse Isolation
32
42
dB
STAB
2
Stability (PIN = +2dBm, Load VSWR = 6:1)
All non-harmonically related
outputs less than -50 dBc
Notes: (1) Guaranteed by production test at TA =2
5°C.
(2) Guaranteed by design only.
(3) Guaranteed by design and characterization.
(4) Harmonic levels are greatly affected by topology of external matching networks.
(5) RF characteristics specified above are for direct die attach (Flip-chip) on SiGe Applications
Board. For wire bonded applications there may be some degradation in performance due to
effects of bond wires and interconnect.
DOC # 05PDS003 Rev 5
07/26/2001
Page 3


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