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PA2423 Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc. |
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PA2423 Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc. |
3 / 9 page PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information DC Electrical Characteristics Conditions: V CC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz, Input and Output externally matched to 5 0Ω ,unless otherwise noted. Symbol Note Parameter Min. Typ. Max. Unit VCC Supply Voltage 3.0 3.3 3.6 V ICC 1 Supply Current (ICC = IVCC0 + IVCC1 + IVCC2 ) 120 150 mA ∆ICC temp 3 Supply Current variation over temperature, (-4 0°C < TA <+85°C) 25 % VCTL PA Output Power Control Voltage Range 0 VCC V ICTL 1 Current sourced by VCTL Pin 200 250 µA 3 Logic High Voltage 2.0 V VRAMP 3 Logic Low Voltage 0.8 V Istby 1 Leakage Current when VRAMP = 0V 0.5 10 µA AC Electrical Characteristics Conditions: VCC0 =VCC1 =VCC2 =VRAMP =3.3V, VCTL =3.3V,PIN =+2 dBm, TA =25°C, f = 2.45GHz, Input and Output externally matched to 5 0Ω, unless otherwise noted Symbol Note Parameter Min . Typ. Max. Unit fL-U 3 Frequency Range 240 0 2500 MHz 1 Output Power @ PIN =+2 dBm,VCTL = 3.3V 20.0 22.5 23.5 dBm POUT 1 Output Power @ PIN =+2 dBm,VCTL =0.4V -8 0 dBm ∆P TEMP 3 POUT variation over temperature (-4 0°C <TA <+85°C), VCTL =3.3V 1 2 dB dP OUT /dVCTL 3 Control Voltage Sensitivity 60 120 dBm/V PAE Power Added Efficiency at +22.5 dBm Output Power 47 % GVAR 3 Gain Variation over band (2400-2500 MHz) 0.7 1 dB 2f, 3f, 4f, 5f 3,4 Harmonics -35 -30 dBc IS21IOFF 2 Isolation in “OFF” State, PIN =+2dBm,VRAMP =0V 20 25 dB IS12 I 2 Reverse Isolation 32 42 dB STAB 2 Stability (PIN = +2dBm, Load VSWR = 6:1) All non-harmonically related outputs less than -50 dBc Notes: (1) Guaranteed by production test at TA =2 5°C. (2) Guaranteed by design only. (3) Guaranteed by design and characterization. (4) Harmonic levels are greatly affected by topology of external matching networks. (5) RF characteristics specified above are for direct die attach (Flip-chip) on SiGe Applications Board. For wire bonded applications there may be some degradation in performance due to effects of bond wires and interconnect. DOC # 05PDS003 Rev 5 07/26/2001 Page 3 |
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