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PA2423G Datasheet(PDF) 1 Page - SiGe Semiconductor, Inc. |
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PA2423G Datasheet(HTML) 1 Page - SiGe Semiconductor, Inc. |
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1 / 9 page  PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetooth tm Class 1 USB Dongles Laptops Access Points Cordless Piconets Flip chip and chip-on-board applications Features +22.5 dBm at 47% Power Added Efficiency Low current 80 mA typical @ Pout=+20 dBm Temperature stability better than 1dB Power-control and Power-down modes -40C to +85C temperature range Gold bump bare die (0.63mm x 0.96mm) Ordering Information Part Package Shipping Method PA2423G Gold bump bare die Diced wafer Waffle pack PA2423G-EV Evaluation kit Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetooth tm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 47% power- added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in Class 1 Bluetooth tm applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit corrects the turn-on/off switching of amplifier output with less than 3 dB overshoot, meeting the Bluetooth tm specification 1.1. The PA2423G operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 120 mA. The silicon/silicon-germanium structure of the PA2423G provides high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Functional Block Diagram Stage 1 Stage 2 Interstage Match Bias Generator Ramp Circuitry V CTL V CC0 V RAMP IN OUT/ V CC2 V CC1 GND GND DOC # 05PDS003 Rev 5 07/26/2001 Page 1 |
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