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Q67006-A9309 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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Q67006-A9309 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 22 page TLE 4470 Semiconductor Group 7 1998-11-01 Note: ESD-Protection according to MIL Std. 883: ± 2 kV. Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Disable Input DIS Voltage V DIS – 42 45 V – Current I DIS – 2 2 mA – Sense Input SI Voltage V SI – 25 18 V – Current I SI – 2 2 mA – Reset Delay D Voltage V D – 0.3 7 V – Current I D – 2 2 mA – Reset Switching Threshold Adjust RADJ Voltage V RADJ – 0.3 7 V – Current I RADJ – – mA Internally limited Temperatures Junction temperature T j – 50 150 °C– Storage temperature T stg – 50 150 °C– Absolute Maximum Ratings (cont’d) – 40 °C < T j < 150 °C Parameter Symbol Limit Values Unit Remarks min. max. |
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