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EN29LV400AT45RTIP Datasheet(PDF) 11 Page - Eon Silicon Solution Inc.

Part # EN29LV400AT45RTIP
Description  4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29LV400AT45RTIP Datasheet(HTML) 11 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
© 2005 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
11
EN29LV400A
Rev. H, Issue Date: 2011/10/27
Write Mode
Write operations, including programming data and erasing sectors of memory, require the host system
to write a command or command sequence to the device. Write cycles are initiated by placing the byte
or word address on the device’s address inputs while the data to be written is input on DQ[7:0] in Byte
Mode (BYTE# = L) or on DQ[15:0] in Word Mode (BYTE# = H). The host system must drive the CE#
and WE# pins Low and the OE# pin high for a valid write operation to take place. All addresses are
latched on the falling edge of WE# and CE#, whichever happens later. All data is latched on the rising
edge of WE# or CE#, whichever happens first. The system is not required to provide further controls or
timings. The device automatically provides internally generated program / erase pulses and verifies the
programmed /erased cells’ margin. The host system can detect completion of a program or erase
operation by observing the RY/BY# pin, or by reading the DQ[7] (Data# Polling) and DQ[6] (Toggle)
status bits.
The ‘Command Definitions’ section of this document provides details on the specific device commands
implemented in the EN29LV400A.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors.
There are two methods to enabling this hardware protection circuitry. The first one requires only that
the RESET# pin be at VID and then standard microprocessor timings can be used to enable or disable
this feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings.
When doing Sector Unprotect, all the other sectors should be protected first.
The second method is meant for programming equipment. This method requires VID be applied to both
OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a
separate document called EN29LV400A Supplement, which can be obtained by contacting a
representative of Eon Silicon Devices, Inc.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected
sector groups to change data while in-system.
The Sector
Unprotect mode is activated by setting the RESET# pin to VID.
During this mode, formerly protected sectors can be programmed
or erased by simply selecting the sector addresses.
Once is
removed from the RESET# pin, all the previously protected sectors
are protected again.
See accompanying figure and timing
diagrams for more details.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide new
data when addresses are changed. While in sleep mode, output is latched and always available to the
system. ICC4 in the DC Characteristics table represents the automatic sleep more current specification.
Start
Reset#=VID (note 1)
Perform Erase or Program
Operations
Reset#=VIH
Temporary Sector
Unprotect Completed (note 2)
Notes:
1. All protected sectors unprotected.
2. Previously protected sectors protected
again.


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