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EN39SL160AL-70BIP Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN39SL160AL-70BIP Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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1 / 50 page  This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 1 EN39SL160AH/L Rev. C, Issue Date: 2011/09/15 FEATURES • Single power supply operation - Full voltage range:1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications. • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 5 mA typical active read current - 15 mA typical program/erase current - 0.2 μA typical standby current • Uniform Sector Architecture: - 512 sectors of 2-Kword - 32 blocks of 32-Kword - Any sector or block can be erased individually • WP#/ACC Input pin: - Write protect (WP#) function allows protection the first or last blocks, regardless of block protect status - Acceleration (ACC) function acceleration program timing. • Block Group protection: - Hardware locking of blocks to prevent program or erase operations within individual blocks - Additionally, temporary Block Unprotect allows code changes in previously locked blocks. • High performance program/erase speed - Word program time: 8µs typical - Sector erase time: 90ms typical - Block erase time: 180ms typical - Chip erase time: 4s typical • JEDEC Standard Embedded Erase and Program Algorithms • JEDEC standard DATA# polling and toggle bits feature • Single Sector, Block and Chip Erase • Chip Unprotect Mode • Erase Suspend / Resume modes: Read or program another Sector/Block during Erase Suspend Mode • Low Vcc write inhibit < 1.2V • Minimum 100K endurance cycle • Package Options - 48-ball 6mm x 8mm TFBGA - 48-ball 4mm x 6mm WFBGA • Industrial temperature Range GENERAL DESCRIPTION The EN39SL160AH/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 words. Any word can be programmed typically in 8µs.The EN39SL160AH/L features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems. The EN39SL160AH/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block or full chip erase operation, where each block can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector or block. EN39SL160AH/L 16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only |
Similar Part No. - EN39SL160AL-70BIP |
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Similar Description - EN39SL160AL-70BIP |
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