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EN29LV320CB-70BIP Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29LV320CB-70BIP Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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1 / 49 page  This Data Sheet may be revised by subsequent versions © 2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 1 EN29LV320C Rev. B, Issue Date: 2011/05/13 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 μA current in standby or automatic sleep mode • Flexible Sector Architecture: - Eight 8-Kbyte sectors, sixty-three 64k-byte sectors - 8-Kbyte sectors for Top or Bottom boot - Sector Group protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Unprotect allows code changes in previously locked sectors • Secured Silicon Sector - Provides a 128-words area for code or data that can be permanently protected. - Once this sector is protected, it is prohibited to program or erase within the sector again. • High performance program/erase speed - Word program time: 8µs typical - Sector erase time: 100ms typical - Chip erase time: 8s typical • JEDEC Standard compatible • Standard DATA# polling and toggle bits feature • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • Support JEDEC Common Flash Interface (CFI). • Low Vcc write inhibit < 2.5V • Minimum 100K program/erase endurance cycles • RESET# hardware reset pin - Hardware method to reset the device to read mode • WP#/ACC input pin - Write Protect (WP#) function allows protection of outermost two boot sectors, regardless of sector protect status - Acceleration (ACC) function provides accelerated program times • Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm TFBGA • Industrial Temperature Range GENERAL DESCRIPTION The EN29LV320C is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The EN29LV320C features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV320C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. . EN29LV320C 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Similar Part No. - EN29LV320CB-70BIP |
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Similar Description - EN29LV320CB-70BIP |
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