S1000-2 datasheet(3/27 Pages) FREESCALE

Part #	S1000-2

Description	RF Power LDMOS Transistors

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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AFT05MS031NR1 AFT05MS031GNR1

3

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.6

—

pF

Output Capacitance

(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

49.5

—

pF

Input Capacitance

(VDS = 13.6 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

109

—

pF

Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ =10 mA, Pout = 31W,f= 520 MHz

Common--Source Amplifier Power Gain

Gps

16.5

17.7

19.0

dB

Drain Efficiency

ηD

70.0

71.4

—

%

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ =10 mA)

Frequency

(MHz)

Signal

Type

VSWR

Pout

(W)

Test Voltage, VDD

Result

520

CW

>65:1 at all Phase Angles

47

(3 dB Overdrive)

17

No Device Degradation

1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

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