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ATC600F5R6BT250XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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ATC600F5R6BT250XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 21 page AFT09MS031NR1 AFT09MS031GNR1 1 RF Device Data Freescale Semiconductor, Inc. RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA =25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA =25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage Result 870 CW >65:1 at all Phase Angles 54 (3 dB Overdrive) 17 No Device Degradation Features • Characterized for Operation from 764 to 941 MHz • Unmatched Input and Output Allowing Wide Frequency Range Utilization • Integrated ESD Protection • Integrated Stability Enhancements • Wideband — Full Power Across the Band (764–870 MHz) • 225°C Capable Plastic Package • Exceptional Thermal Performance • High Linearity for: TETRA, SSB, LTE • Cost--effective Over--molded Plastic Packaging • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel. Typical Applications • Output Stage 800 MHz Trunking Band Mobile Radio • Output Stage 900 MHz Trunking Band Mobile Radio Document Number: AFT09MS031N Rev. 0, 5/2012 Freescale Semiconductor Technical Data 764--941 MHz, 31 W, 13.6 V WIDEBAND RF POWER LDMOS TRANSISTORS AFT09MS031NR1 AFT09MS031GNR1 TO--270--2 PLASTIC AFT09MS031NR1 Figure 1. Pin Connections (Top View) Drain Gate Note: The backside of the package is the source terminal for the transistor. TO--270--2 GULL PLASTIC AFT09MS031GNR1 © Freescale Semiconductor, Inc., 2012. All rights reserved. |
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