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EDE5116AJSE-LI Datasheet(PDF) 9 Page - Elpida Memory

Part # EDE5116AJSE-LI
Description  512M bits DDR2 SDRAM
Download  76 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDE5116AJSE-LI Datasheet(HTML) 9 Page - Elpida Memory

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EDE5116AJSE-LI
Data Sheet E1171E40 (Ver. 4.0)
9
Parameter
Symbol
Grade
max.
Unit
Test condition
Auto-refresh current
IDD5
100
mA
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
IDD6
3.5
mA
−40°C ≤ TC ≤ +65°C
Self-refresh current
IDD6
5.5
mA
Self Refresh Mode;
CK and /CK at 0V; CKE
≤ 0.2V;
Other control and
address bus inputs are
FLOATING;
Data bus inputs are
FLOATING
+65
°C ≤ TC ≤ +95°C
Operating current
(Bank interleaving)
IDD7
230
mA
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD),
AL = tRCD (IDD)
−1
× tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD),
tRRD = tRRD(IDD), tRCD = 1
× tCK (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, /DQS. IDD values must be met with all combinations of EMRS bits
10 and 11.
5. Definitions for IDD
L is defined as VIN
≤ VIL (AC) (max.)
H is defined as VIN
≥ VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-667
Parameter
5-5-5
Unit
CL (IDD)
5
tCK
tRCD (IDD)
15
ns
tRC (IDD)
60
ns
tRRD (IDD)
10
ns
tCK (IDD)
3
ns
tRAS (min.)(IDD)
45
ns
tRAS (max.)(IDD)
70000
ns
tRP (IDD)
15
ns
tRFC (IDD)
105
ns


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