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PWB80A30 Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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PWB80A30 Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor 1 D-95, Sector 63, Noida sales@nainasemi.com Non- Features • Low voltage three-phase • High surge current of 2500A @ 60Hz • Easy construction • Non-isolated • Mounting base as common anode Electrical Characteristics (TC = 25 OC unless otherwise specified) Parameter Average on-state current Single phase, half conduction @ T R.M.S. on-state current On-state surge current half cycle, 50Hz/60Hz, peak value, non-repetitive I 2t required for fusing Peak gate power dissipation Average gate power dissipation Peak gate current Peak gate voltage (forward) Peak gate voltage (reverse) Critical rate of rise of on-state current I0 = 200mA, V A/µs Critical rate of rise of off-state voltage TJ = 150 wave Holding current Thermal & Mechanical Specifications (TC = 25 Parameter Operating junction temperature range Storage temperature range Thermal resistance, junction to case Voltage Ratings (TC = 25 OC unless otherwise specified) Parameter Symbol Maximum repetitive peak reverse voltage VRRM Maximum non-repetitive peak reverse voltage VRSM Maximum repetitive peak off-state voltage VDRM emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com -isolated Thyristor Module NT3 C unless otherwise specified) Conditions Symbol Single phase, half-wave, 180 0 conduction @ TC = 116 0C IT(AV) IT(RMS) half cycle, 50Hz/60Hz, peak value, repetitive ITSM I 2t PGM PGM(AV) IGM VFGM VRGM = 200mA, V0 = ½ VDRM , dIG/dt = 1 di/dt = 150 0C, V 0 = 2/3 V DRM , exponential wave dv/dt IH = 25 OC unless otherwise specified) Symbol TJ TSTG Rth(JC) unless otherwise specified) Values Units 300 V 360 V 300 V 80NT3 4205450 • Fax: 0120-4273653 NT3 Values Units 80 A 125 A 2280 A 26000 A 2S 10 W 1 W 3 A 10 V 5 V 50 A/µs 50 V/µs 100 mA Values Units -30 to +150 0C -30 to +125 0C 0.35 0C/W |
Similar Part No. - PWB80A30 |
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Similar Description - PWB80A30 |
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