DESCRIPTION

The

AMS3400SRG is the N-Channel logic enhancement mode power field effect transistor

is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other battery powered circuits where high

side switching

.

PIN CONFIGURATION

SOT-23

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23

Y: Year Code

A: Week Code

FEATURE

(Typ.)

Super high density cell design for

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

3

1

2

D

G

S

3

1

2

A0YA

AMS3400SRG

Advanced Monolithic Systems http://www.ams-semitech.com

1