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ELM34411AA-N Datasheet(PDF) 2 Page - ELM Technology Corporation

Part # ELM34411AA-N
Description  Single P-channel MOSFET
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Manufacturer  ELM-TECH [ELM Technology Corporation]
Direct Link  http://www.elm-tech.com
Logo ELM-TECH - ELM Technology Corporation

ELM34411AA-N Datasheet(HTML) 2 Page - ELM Technology Corporation

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ELM34411AA-N
■Electrical characteristics
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-30
V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
-1
μA
Vds=-20V,Vgs=0V,Tj=125°C
-10
Gate-body leakage current
Igss Vds=0V, Vgs=±25V
±
100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-1.0 -1.5 -3.0
V
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-50
A
1
Static drain-source on-resistance
Rds(on)
Vgs=-10V, Id=-12A
12
14
1
Vgs=-4.5V, Id=-9A
18
22
Forward transconductance
Gfs Vds=-10V, Id=-12A
28
S
1
Diode forward voltage
Vsd Is=If, Vgs=0V
-1.2
V
1
Max. body-diode continuous current
Is
-2.1
A
Pulsed body-diode current
Ism
-4
A
3
DYNAMIC PARAMETERS
Input capacitance
Ciss
Vgs=0V, Vds=-15V, f=1MHz
3000
pF
Output capacitance
Coss
870
pF
Reverse transfer capacitance
Crss
360
pF
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=-10V, Vds=-15V
Id=-12A
30
42
nC
2
Gate-source charge
Qgs
9
nC
2
Gate-drain charge
Qgd
11
nC
2
Turn-on delay time
td(on)
Vgs=-10V, Vds=-15V
Id≈-1A, Rgen=6Ω
12
ns
2
Turn-on rise time
tr
16
ns
2
Turn-off delay time
td(off)
50
ns
2
Turn-off fall time
tf
100
ns
2
Ta=25°C
Single P-channel MOSFET
4 -
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.


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