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ELM13410CA-S Datasheet(PDF) 2 Page - ELM Technology Corporation |
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ELM13410CA-S Datasheet(HTML) 2 Page - ELM Technology Corporation |
2 / 4 page 2 Ta=25°C 4 - Single N-channel MOSFET NOTE : 1. 2. 3. 4. 5. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. Repetitive rating, pulse width limited by junction temperature. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. ELM13410CA-S ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 30 V Zero gate voltage drain current Idss Vds=24V, Vgs=0V 1 μA Tj=55°C 5 Gate-body leakage current Igss Vds=0V, Vgs=±12V 100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 0.5 0.8 1.0 V On state drain current Id(on) Vgs=4.5V, Vds=5V 30 A Static drain-source on-resistance Rds(on) Vgs=10V, Id=5.8A 23 28 mΩ Tj=125°C 29 39 Vgs=4.5V, Id=5A 26 33 mΩ Vgs=2.5V, Id=4A 35 42 mΩ Vgs=1.8V, Id=3A 54 72 mΩ Forward transconductance Gfs Vds=5V, Id=5A 12 17 S Diode forward voltage Vsd Is=1A, Vgs=0V 0.66 1.00 V Max. body-diode continuous current Is 2.5 A DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=15V, f=1MHz 767 pF Output capacitance Coss 111 pF Reverse transfer capacitance Crss 82 pF Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz 1.3 Ω SWITCHING PARAMETERS Total gate charge Qg Vgs=4.5V, Vds=15V, Id=5.8A 10.0 nC Gate-source charge Qgs 1.2 nC Gate-drain charge Qgd 3.1 nC Turn-on delay time td(on) Vgs=10V, Vds=15V Rl=2.7Ω, Rgen=6Ω 5.0 ns Turn-on rise time tr 5.5 ns Turn-off delay time td(off) 39.0 ns Turn-off fall time tf 4.7 ns Body diode reverse recovery time trr If=5A, dl/dt=100A/μs 15.0 ns Body diode reverse recovery charge Qrr If=5A, dl/dt=100A/μs 7.1 nC |
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