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SPU23N05 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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SPU23N05 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 8 page  Semiconductor Group 1 29/Jan/1998 SPD23N05 SPU23N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD23N05 55 V 22 A 0.06 Ω P-TO252 Q67040 - S4138 - A2 SPU23N05 55 V 22 A 0.06 Ω P-TO251 Q67040 - S4131 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID 16 22 A Pulsed drain current TC = 25 °C IDpuls 88 Avalanche energy, single pulse ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C EAS 90 mJ Avalanche current,limited by Tjmax IAR 22 A Avalanche energy,periodic limited by Tjmax EAR 5.5 mJ Reverse diode dv/dt IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 55 W |
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