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SMBTA70 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SMBTA70 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page Semiconductor Group 2 SMBTA 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Unit Values Parameter Symbol min. typ. max. DC characteristics V Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 40 – – Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 4–– nA µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 100 20 – DC current gain IC = 5 mA, VCE = 10 V hFE 40 – 400 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VCEsat – – 0.25 nA Emitter-base cutoff current VEB = 4 V, IC = 0 IEB0 ––20 MHz Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz fT 125 – – pF Output capacitance VCB = 10 V, f = 1 MHz Cobo ––4 AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. |
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