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NX3P191 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # NX3P191
Description  Logic controlled high-side power switch
Download  15 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

NX3P191 Datasheet(HTML) 4 Page - NXP Semiconductors

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NX3P191
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 4 November 2011
4 of 15
NXP Semiconductors
NX3P191
Logic controlled high-side power switch
10. Recommended operating conditions
11. Thermal characteristics
[1]
The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to
larger Cu layer areas e.g. to the power and ground layer. In multi-layer PCB applications, the second layer should be used to create a
large heat spreader area right below the device. If this layer is either ground or power, it should be connected with several vias to the top
layer connecting to the device ground or supply.Try not to use any solder-stop varnish under the chip.
[2]
Please rely on the measurement data given for a rough estimation of the Rth(j-a) in your application. The actual Rth(j-a) value may vary
in applications using different layer stacks and layouts
12. Static characteristics
Table 6.
Recommended operating conditions
Symbol Parameter
Conditions
Min
Max
Unit
VI
input voltage
1.1
3.6
V
Tamb
ambient temperature
40
+85
C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction to ambient
[1][2] 130
K/W
Table 8.
Static characteristics
VI(VIN) = VI(EN) , unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = 25 C
Tamb = 40 C to +85 C Unit
Min
Typ
Max
Min
Max
VIH
HIGH-level input
voltage
EN input
VI(VIN) = 1.1 V to 1.3 V
-
-
-
1.0
-
V
VI(VIN) = 1.3 V to 1.8 V
-
-
-
1.2
-
V
VI(VIN) = 1.8 V to 3.6 V
-
-
-
1.2
-
V
VIL
LOW-level input
voltage
EN input
VI(VIN) = 1.1 V to 1.3 V
-
-
-
-
0.3
V
VI(VIN) = 1.3 V to 1.8 V
-
-
-
-
0.4
V
VI(VIN) = 1.8 V to 3.6 V
-
-
-
-
0.45
V
Rpd
pull-down resistance EN input
-
4
-
-
-
M
IGND
ground current
VI(VIN) = 3.6 V; VOUT open;
see Figure 5 and Figure 6
--
-
2-
A
IOFF
power-off leakage
current
VI(VIN) =3.6 V; VI(EN) =GND;
VO(VOUT) = GND; see Figure 8
-0.1
-
-
2
A
Rdch
discharge resistance VOUT output
-
280
-
-
-


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