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TPS62125DSGT Datasheet(PDF) 3 Page - Texas Instruments |
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TPS62125DSGT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 37 page  TPS62125 www.ti.com SLVSAQ5A – MARCH 2012 – REVISED APRIL 2012 RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT Supply voltage VIN 3 17 V 3V ≤ VIN < 6V 200 Output current capability mA 6V ≤ VIN ≤ 17V 300 Operating ambient temperature TA (1), (Unless Otherwise Noted) –40 85 °C Operating junction temperature range, TJ –40 125 °C (1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)) and the maximum power dissipation of the device in the application (PD(max)). see the IC Package Thermal Metrics application report, SPRA953. ELECTRICAL CHARACTERISTICS TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted), VIN = 12V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage range(1) 3.0 17 V VOUT Output voltage range 1.2 10 V IOUT = 0mA, Device not switching, EN = VIN, 13 23 µA regulator sleeps IOUT = 0mA, Device switching, VIN = 7.2V, IQ Quiescent current 14 VOUT = 1.2V, L = 22µH µA VIN = 5V, EN = 1.1V, enable comparator active, 6 11 device DC/DC converter off VIN = 5 V = VOUT, TA = 25°C, high-side MOSFET IActive Active mode current consumption 230 275 µA switch fully turned on (100% Mode) Enable comparator off, EN < 0.4V, ISD Shutdown current(2) 0.35 2.4 µA VOUT = SW = 0 V, VIN = 5V Falling VIN 2.8 2.85 V VUVLO Undervoltage lockout threshold Rising VIN 2.9 2.95 V ENABLE COMPARATOR THRESHOLD AND HYSTERESIS (EN, EN_hys) VTH EN ON EN pin threshold rising edge 1.16 1.20 1.24 V VTH EN OFF EN pin threshold falling edge 3.0 V ≤ VIN ≤ 17V 1.12 1.15 1.19 V VTH EN Hys EN pin hysteresis 50 mV IIN EN Input bias current into EN pin EN = 1.3V 0 50 nA VEN_hyst EN_hys pin output low IEN_hyst = 1mA, EN = 1.1V 0.4 V IIN EN_hyst Input bias current into EN_hyst pin EN_hyst = 1.3V 0 50 nA POWER SWITCH VIN = 3 V, I = 100mA 2.4 4 high-side MOSFET on-resistance VIN = 12V, I = 100mA 1.5 2.6 RDS(ON) Ω VIN = 3V, I = 100mA 0.75 1.3 low-side MOSFET on-resistance VIN = 12V, I = 100mA 0.6 1 Switch current limit high-side ILIMF VIN = 12V 600 750 900 mA MOSFET Thermal shutdown Increasing junction temperature 150 °C TSD Thermal shutdown hysteresis Decreasing junction temperature 20 °C OUTPUT tONmin Minimum ON time VIN = 5V, VOUT = 2.5 V 500 ns tOFFmin Minimum OFF time VIN = 5 V 60 ns (1) The part is functional down to the falling UVLO (Under Voltage Lockout) threshold (2) Current into VIN pin Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s) :TPS62125 |
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