TPS2378DDA datasheet(3/25 Pages) TI1

Part #	TPS2378DDA

Description	IEEE 802.3at PoE High-Power PD Interface

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Manufacturer	TI1 [Texas Instruments]

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TPS2378

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SLVSB99A – MARCH 2012 – REVISED MARCH 2012

RECOMMENDED OPERATING CONDITIONS

over operating free-air temperature range and voltages with respect to VSS (unless otherwise noted)

MIN

NOM

MAX

UNIT

RTN, VDD

0

57

Input voltage range

APD to RTN

0

18

V

CDB, T2P to RTN

0

57

RTN

0.85

A

Sinking current

CDB, T2P

2

mA

Resistance

CLS(1)

60

Ω

Junction temperature

–40

125

°C

(1)

Voltage should not be externally applied to this pin.

ELECTRICAL CHARACTERISTICS

40 V

≤ VVDD ≤ 57 V, RDEN = 24.9 kΩ, VCDB, VCLS, and VT2P open; VAPD = VRTN; –40°C ≤ TJ ≤ 125°C. Positive currents are into

pins. Typical values are at 25°C. All voltages are with respect to VVSS unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DETECTION (DEN)

DEN open, VVDD = 10.1 V, Measure ISUPPLY(VDD, RTN,

Bias current

3

4.8

12

µA

DEN), Not in mark

Measure ISUPPLY(VDD, RTN, DEN), VDD = 1.4 V

53.8

56.5

58.3

Detection current

µA

Measure ISUPPLY(VDD, RTN, DEN), VDD = 10.1 V, Not in

395

410

417

mark

Disable threshold

DEN falling

3

3.7

5

V

VPD_DIS

Hysteresis

50

113

200

mV

AUXILIARY POWER DETECTION (APD)

VAPDEN

VAPD rising, measure to VRTN

1.40

1.50

1.60

Voltage threshold

V

VAPDH

Hysteresis, measure to VRTN

0.27

0.30

0.33

Sinking current

V(APD–RTN) = 5 V, measure IAPD

1

1.73

3

µA

CLASSIFICATION (CLS)

13 V

≤ VVDD ≤ 21 V, Measure IVDD + IDEN + IRTN

RCLS = 1270 Ω

1.8

2.17

2.6

RCLS = 243 Ω

9.9

10.6

11.2

ICLS

Classification current

RCLS = 137 Ω

17.6

18.6

19.4

mA

RCLS = 90.9 Ω

26.5

27.9

29.3

RCLS = 63.4 Ω

38

39.9

42.0

VCL_ON

VVDD rising, ICLS ↑

11.9

12.5

13.0

Class lower threshold

V

VCL_H

Hysteresis

1.4

1.6

1.7

VCU_ON

VVDD rising, ICLS↓

21

22

23

Class upper threshold

V

VCU_H

Hysteresis

0.5

0.78

0.9

VMSR

Mark reset threshold

VVDD falling

3

3.9

5

V

Mark state resistance

2-point measurement at 5 V and 10.1 V

6

10

12

k

Ω

Leakage current

VVDD = 57 V, VCLS = 0 V, measure ICLS

1

µA

PASS DEVICE (RTN)

rDS(on)

On resistance

0.2

0.42

0.75

Ω

Input bias current

VVDD = VRTN = 30 V, measure IRTN

30

µA

Current limit

VRTN =1.5 V

0.85

1

1.2

A

Inrush current limit

VRTN = 2 V, VVDD: 20 V → 48 V

100

140

180

mA

Inrush termination

Percentage of inrush current

80%

90%

99%

Foldback threshold

VRTN rising

11

12.3

13.6

V

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