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Q68000-A8436 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q68000-A8436 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 Silicon Switching Diode Array SMBD 2835 SMBD 2836 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration SMBD 2835 SMBD 2836 Q68000-A8547 Q68000-A8436 sA3 sA2 SOT-23 Parameter Symbol Values Unit Reverse voltage VR 30 V Forward current IF 200 mA Junction temperature Tj 150 ˚C Total power dissipation, TS =31˚C Ptot 330 mW Storage temperature range Tstg – 65 … + 150 Peak reverse voltage VRM 35 Surge forward current, t = 1 µs IFS 4.5 A Thermal Resistance Junction - ambient2) Rth JA ≤ 500 K/W SMBD 2835 SMBD 2836 50 75 Junction - soldering point Rth JS ≤ 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. q For high-speed switching applications q Common anode 5.91 |
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