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DRV110 Datasheet(PDF) 5 Page - Texas Instruments

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Part # DRV110
Description  POWER SAVING SOLENOID CONTROLLER WITH INTEGRATED SUPPLY REGULATION
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

DRV110 Datasheet(HTML) 5 Page - Texas Instruments

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DRV110
www.ti.com
SLVSBA8 – MARCH 2012
ABSOLUTE MAXIMUM RATINGS
(1) (2)
VALUE
UNIT
VIN
Input voltage range
–0.3 to 20
V
Voltage range on EN, STATUS, PEAK, HOLD, OSC, SENSE, KEEP
–0.3 to 7
V
Voltage range on OUT
–0.3 to 20
V
HBM (human body model)
2000
ESD rating
V
CDM (charged device model)
500
TJ
Operating virtual junction temperature range
–40 to 125
°C
Tstg
Storage temperature range
–65 to 150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
IQ
Supply current
1
1.5
3
mA
VIN
Device will start sinking current when VIN > 15 V to limit VIN
6
15
V
CIN
Input capacitor between VIN and GND (1)
1
4.7
µF
L
Solenoid inductance
1
H
TA
Operating ambient temperature
-40
105
°C
(1)
4.7-µF input capacitor and full wave rectified 230-Vrms AC supply results in approximately 500-mV supply ripple.
ELECTRICAL CHARACTERISTICS
VIN = 14 V, TA = -40°C to 105°C, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
Standby current
EN = 0, VIN = 14 V, bypass deactivated
200
250
µA
Quiescent current
EN = 1, VIN = 14 V, bypass deactivated
360
570
IQ
EN = 0, IVIN = 2 mA, bypass activated
10.5
15
19
Internally regulated supply
V
EN = 1, IVIN = 2 mA, bypass activated
14.5
15
15.5
GATE DRIVER
VDRV
Gate drive voltage
Supply voltage in regulation (IVIN > 1 mA)
VIN
V
IDRV_SINK
Gate drive sink current
VOUT = 15 V; VIN = 15 V
8
15
mA
IDRV_SOURCE
Gate drive source current
VOUT = GND; VIN = 15 V
-15
-10
mA
fPWM
PWM clock frequency
OSC = GND
15
20
27
kHz
DMAX
Maximum PWM duty cycle
100
%
DMIN
Minimum PWM duty cycle
7.5
%
Delay between EN going high until gate driver
tD
Start-up delay
50
µs
starts switching, fPWM = 20 kHz
CURRENT CONTROLLER, INTERNAL SETTINGS
IPEAK
Peak current
RSENSE = 1 Ω, PEAK = GND
270
300
330
mA
IHOLD
Hold current
RSENSE = 1 Ω, HOLD = GND
40
50
65
mA
Copyright © 2012, Texas Instruments Incorporated
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