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DRV110 Datasheet(PDF) 5 Page - Texas Instruments |
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DRV110 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 17 page DRV110 www.ti.com SLVSBA8 – MARCH 2012 ABSOLUTE MAXIMUM RATINGS (1) (2) VALUE UNIT VIN Input voltage range –0.3 to 20 V Voltage range on EN, STATUS, PEAK, HOLD, OSC, SENSE, KEEP –0.3 to 7 V Voltage range on OUT –0.3 to 20 V HBM (human body model) 2000 ESD rating V CDM (charged device model) 500 TJ Operating virtual junction temperature range –40 to 125 °C Tstg Storage temperature range –65 to 150 °C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT IQ Supply current 1 1.5 3 mA VIN Device will start sinking current when VIN > 15 V to limit VIN 6 15 V CIN Input capacitor between VIN and GND (1) 1 4.7 µF L Solenoid inductance 1 H TA Operating ambient temperature -40 105 °C (1) 4.7-µF input capacitor and full wave rectified 230-Vrms AC supply results in approximately 500-mV supply ripple. ELECTRICAL CHARACTERISTICS VIN = 14 V, TA = -40°C to 105°C, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY Standby current EN = 0, VIN = 14 V, bypass deactivated 200 250 µA Quiescent current EN = 1, VIN = 14 V, bypass deactivated 360 570 IQ EN = 0, IVIN = 2 mA, bypass activated 10.5 15 19 Internally regulated supply V EN = 1, IVIN = 2 mA, bypass activated 14.5 15 15.5 GATE DRIVER VDRV Gate drive voltage Supply voltage in regulation (IVIN > 1 mA) VIN V IDRV_SINK Gate drive sink current VOUT = 15 V; VIN = 15 V 8 15 mA IDRV_SOURCE Gate drive source current VOUT = GND; VIN = 15 V -15 -10 mA fPWM PWM clock frequency OSC = GND 15 20 27 kHz DMAX Maximum PWM duty cycle 100 % DMIN Minimum PWM duty cycle 7.5 % Delay between EN going high until gate driver tD Start-up delay 50 µs starts switching, fPWM = 20 kHz CURRENT CONTROLLER, INTERNAL SETTINGS IPEAK Peak current RSENSE = 1 Ω, PEAK = GND 270 300 330 mA IHOLD Hold current RSENSE = 1 Ω, HOLD = GND 40 50 65 mA Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): DRV110 |
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