Page 3 of 6

SEMICONDUCTOR

RoHS

RoHS

NST120F120 / NST120F120-A

1.0

0.60

0.50

0.40

0.30

0.20

0.10

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.9

0.05

Fig.1b transient thermal impedance model

:

0.148

0.238

0.174

0.006

0.0909

0.524

Power

(watts)

Junction

temp (°C)

RC MODEL

Case temperature (°C)

T

J

V

R

= 800V

600

500

400

300

200

100

0

30A

60A

120A

Fig.2 Forward current vs. forward voltage

Fig.3 Reverse recovery time vs. current rate of change

0

0.5

1

1.5

2

2.5

3

3.5

0

200

400

600

800

1000

1200

200

180

160

140

120

100

80

60

40

20

0

Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration

Rectangular pulse duration (seconds)

Current rate of change(A/μs), -di /dt

F

Duty Factor D =t /t

1 2

Peak T = P

xZ

+T

DM

θ

J

JC

C

Nell High Power Products

T =150°C

J

T =125°C

J

T =25°C

J

T =-55°C

J