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NKT160-16A Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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NKT160-16A Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 4 page Page2of4 SEMICONDUCTOR RoHS RoHS FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT AV ( ) 180° , conduction half sine wave ,50Hz Maximum RMS on state current - A Maximum peak one cycle, , - on state - - non repetitive surge current ITSM t ms = 10 No voltage reapplied Sine half wave, initial TJ = TJ maximum t ms = 8.3 Maximum I2t for fusing I 2t kA2s Maximum I2√t for fusing I 2√t t ms to ms no = 0.1 10 , voltage reapplied Maximum on state voltage drop - VTM ITM = 480A , TJ = 25 ° , 180° C conduction Maximum forward voltage drop VFM IFM = 480A, TJ = 25 ° , 180° C conduction Maximum holding current IH Anode supply V initial I = 6 T = 30 , A TJ =25° C mA Maximum latching current IL Anode supply V resistive load = 6 = 1 Gate pulse V s T : 10 , 100 , J = 25 ° C 400 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum peak reverse and off state leakage current - IRRM, IDRM TJ = 125 ° C RMS isolation Voltage VISO 50 , , Hz circuit to base all terminals shorted V Critical rate of rise of off state voltage - dV dt / TJ = TJ , maximum exponential to rated V 67 % DRM / V s V UNITS ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, - MAXIMUM NON REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT C 125 ° mA NKT160 04 400 500 20 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 180° , conduction half sine wave ,50Hz ,T = 85 C C ° VALUE 40~150 1.4 1.7 1458 251 5400 160 85 5670 A °C 146 133 20 800 mA N High Power Products ell t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 kA2√s 102 93 reapplied 100%VRRM 2500(1min) 3500(1s) UNITS NKT160A/NKH160A Series NKH160 lT(RMS) www.nellsemi.com |
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