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N-HFA15TB60 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part No. N-HFA15TB60
Description  FRED Ultrafast Soft Recovery Diode, 15 A
Download  6 Pages
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Maker  NELLSEMI [Nell Semiconductor Co., Ltd]
Homepage  http://www.nellsemi.com
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 2 page
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to case
RthJC
-
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and gerased
Weight
-
-
Mounting torque
6
(5)
-
12
(10)
kgf . cm
(lbf . in)
Marking device
Case style TO-220AC
HFA15TB60
SEMICONDUCTOR
RoHS
RoHS
Page 2 of 6
Nell High Power Products
g
-
2
°C
300
1.7
-
-
-
80
-
-
-
0.5
-
oz.
-
0.07
N-HFA15TB60
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
V
-
= 30 A
IF
-
-
µA
-
-
600
1.4
10
1.0
-
400
pF
25
ELECTRICAL SPECIFICATIONS
(TJ
Cathode to anode
breakdown voltage
VBR
= 100 µA
IR
Maximum forward voltage
= 15 A
IF
= 15 A, T
I
= 125 ºC
F
J
Maximum reverse
leakage current
IRM
Junction capacitance
1.5
1.7
-
-
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
ns
-
-
42
74
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
(TJ
Reverse recovery time
IF = 1.0 A, dI /dt = -200 A/µs, V =30 V, T = 25°C
F
R
J
19
-
A
-
6.5
4.0
-
nC
-
241
84
-
Peak recovery current
Reverse recovery charge
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
T = 125 ºC
J
T = 125 ºC
J
T = 125 ºC
J
T = 25 ºC
J
T = 25 ºC
J
T = 25 ºC
J
I = 15A
F
dI /dt = -200 A/µs
F
V = 200 V
R
-
VFM
CT
V = 200V
R
T = 125°C, V = V rated
J
R
R
V = V rated
R
R
I = 0.5A, I = 1.0A, I
= 250mA (RG#1 CKT)
F
R
RR
22
-
1.8
UNITS
MAX.
TYP.
MIN.
UNITS
MAX.
TYP.
MIN.
A/µs
-
160
188
-
dl
/dt2
(rec)M
T = 125 ºC
J
T = 25 ºC
J
-
-
nH
8
Series inductance
LS
50
1000
-
-
Measured lead to lead 5 mm from package body
dl
/dt1
(rec)M
120
6.0
60
30
10
600
180
1.6
2.1
Peak rate of fall of recovery
current during tb
www.nellsemi.com




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