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N-HFA08TB120 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part No. N-HFA08TB120
Description  FRED Ultrafast Soft Recovery Diode, 8 A
Download  6 Pages
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Maker  NELLSEMI [Nell Semiconductor Co., Ltd]
Homepage  http://www.nellsemi.com
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 2 page
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
Thermal resistance,
junction to case
RthJC
-
-
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
Weight
-
-
Mounting torque
6.0
(5.0)
-
12
(10)
kgf cm
.
.
(lbf in)
Marking device
Case style TO-220AC
HFA08TB120
ºC
SEMICONDUCTOR
RoHS
RoHS
Page 2 of 6
Nell High Power Products
1.7
40
0.25
-
-
300
g
-
6
oz.
-
0.21
-
-
N-HFA08TB120
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
V
-
= 16 A
IF
-
-
µA
-
-
1200
2.3
10
0.31
-
135
pF
11
ELECTRICAL SPECIFICATIONS
(TJ
Cathode to anode
breakdown voltage
VBR
= 100 µA
IR
Maximum forward voltage
= 8.0 A
IF
= 8.0 A, T
I
= 125 ºC
F
J
Maximum reverse
leakage current
IRM
Junction capacitance
2.5
3.3
-
-
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
ns
-
-
63
105
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
(TJ
Reverse recovery time
IF = 1.0 A, dI /dt = -200 A/µs, V =30 V, T = 25°C
F
R
J
30
-
A
-
6.1
4.5
-
nC
-
335
140
-
Peak recovery current
Reverse recovery charge
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
T = 125 ºC
J
T = 125 ºC
J
T = 125 ºC
J
T = 25 ºC
J
T = 25 ºC
J
T = 25 ºC
J
I = 8.0A
F
dI /dt = -200 A/µs
F
V = 200 V
R
-
VFM
CT
V = 200V
R
T = 125°C, V = V rated
J
R
R
V = V rated
R
R
I = 0.5A, I = 1.0A, I
= 250mA (RG#1 CKT)
F
R
RR
28
-
3.0
UNITS
MAX.
TYP.
MIN.
UNITS
MAX.
TYP.
MIN.
A/µs
-
85
133
-
T = 125 ºC
J
T = 25 ºC
J
-
-
nH
8.0
Series inductance
LS
20
1000
-
-
Measured lead to lead 5 mm from package body
160
8
95
11
880
380
3.1
4.1
35
Peak rate of fall of recovery
current during tb
dl
/dt2
(rec)M
dl
/dt1
(rec)M
www.nellsemi.com




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