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N-30ETU06 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part No. N-30ETU06
Description  FRED Ultrafast Soft Recovery Diode, 30 A
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Maker  NELLSEMI [Nell Semiconductor Co., Ltd]
Homepage  http://www.nellsemi.com
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 2 page
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to case
RthJC
-
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and gerased
Weight
-
-
Mounting torque
6
(5)
-
12
(10)
kgf . cm
(lbf . in)
Marking device
Case style TO-220AC
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
g
-
2
°C
300
-
-
80
-
-
-
0.4
-
oz.
-
0.07
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
V
-
= 60 A
IF
-
-
µA
-
-
600
1.10
10
-
-
-
pF
35
ELECTRICAL SPECIFICATIONS
(TJ
Cathode to anode
breakdown voltage
VBR
= 100 µA
IR
Maximum forward voltage
= 30 A
IF
= 30 A, T
I
= 125 ºC
F
J
Maximum reverse
leakage current
IRM
Junction capacitance
1.40
1.80
-
-
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
ns
-
-
30
175
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
(TJ
Reverse recovery time
IF = 1.0 A, dI /dt = -100 A/µs, V =30 V, T = 25°C
F
R
J
23
-
A
-
6
3
-
nC
-
485
55
-
Peak recovery current
Reverse recovery charge
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
T = 125 ºC
J
T = 125 ºC
J
T = 125 ºC
J
T = 25 ºC
J
T = 25 ºC
J
T = 25 ºC
J
I = 30A
F
dI /dt = -200 A/µs
F
V = 400 V
R
-
VFM
CT
V = 200V
R
T = 150°C, V = V rated
J
R
R
V = V rated
R
R
I = 0.5A, I = 1.0A, I
= 250mA (RG#1 CKT)
F
R
RR
30
-
1.70
UNITS
MAX.
TYP.
MIN.
UNITS
MAX.
TYP.
MIN.
A/µs
-
160
260
-
dl
/dt2
(rec)M
T = 125 ºC
J
T = 25 ºC
J
-
-
nH
8
Series inductance
LS
1000
-
-
Measured lead to lead 5 mm from package body
Peak rate of fall of recovery
dl
/dt1
(rec)M
125
6.0
60
35
10
600
180
1.35
2.0
N-30ETU06
-
current during tb
0.8
0.5
Case style TO-220AB
30ETU06
30ATU06
www.nellsemi.com
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