SEMICONDUCTOR

RoHS

RoHS

Page2of3

Nell High Power Products

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

GBJ30

UNIT

1300

04

500

700

900

1200

400

600

800

1000

12

08

06

10

1100

1200

400

600

800

1000

V

Maximumrepetitivepeakreversevoltage

Peakreversenon-repetitivevoltage

MaximumDCblockingvoltage

Maximumaverageforwardrectifiedoutputcurrent,T =85 C

c

°

Peakforwardsurgecurrentsinglesine-wavesuperimposedon

ratedload

Rating(non-repetitive,fortgreaterthan1msandlessthan8.3ms)

forfusing

RMSisolationvoltagefromcasetoleads

Operatingjunctionstoragetemperaturerange

I t

2

2500

664

30

-40 to150

400

A s

2

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

GBJ30

UNIT

04

12

08

06

10

Maximuminstantaneousforwarddropperdiode

MaximumreverseDCcurrentatratedDCblocking

500

1.10

5

voltageperdiod

TEST

CONDITIONS

°

°

THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

GBJ30

UNIT

04

12

08

06

10

Typicalthermalresistance

(1)Withheatsink,singlesideheatdissipation,halfsinewave.

(1)

1.0

Notes

Storage temperaturerange

-40 to150

ºC

TEST CONDITIONS

junctiontocase

Single-sideheatdissipation,sine

halfwave

Mounting

± 10 %

to heatsink M3

A mounting compound is recommended

and the torque should be rechecked after

a

for the spread

period of

hours to allow

3

.

of the compound

0.8

Nm

Approximate weight

6.5

torque

g

-

Product type: “GBJ” Package,1

Bridge

Ø

1

2

3

-

Devicecode

30

10

3

GBJ

-

100=

Voltagecode:codex

I

rating:

for

A

F(AV)

"30"

30

GBJ30

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