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30PT12BI Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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30PT12BI Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 6 page  Page 1 of 6 SEMICONDUCTOR 30PT Series RoHS RoHS Stansard SCRs, 30A Main Features Symbol Value Unit IT(RMS) V /V DRM RRM IGT 30 A V mA 4 to 50 600 to 1600 DESCRIPTION www.nellsemi.com The 30PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications, where power dissipation are critical such as solid state relay, welding equipment and high power SYMBOL IT(RMS) RMS on-state current full sine wave ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A I t 2 2 I t Value for fusing 800 2 A s dI/dt Critical rate of rise of on-state current 50 IGM Peak gate current PG(AV) Average gate power dissipation Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNIT VALUE 400 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F = 60 Hz T =125ºC j T = 125ºC j T = 125ºC j T = 20 µs p Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS V 600 to 1600 T =125ºC j VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage (180° conduction angle ) 4 1 Average on-state current (180° conduction angle) IT(AV) 19 A I = 2xl , t ≤100ns G GT r TO-3P/TO-247AB TO-220AB/TO-263 T =100°C c T =95°C c Maximum gate power PGM W 10 T =20µs p T = 125ºC j TO-220AB insulated/TO-3P insulated T =100°C c T =95°C c 30 420 control. Base on a clip assembly technology, they offer a superior performance in surge current capabilities. TO-3P/TO-247AB TO-220AB/TO-263 TO-220AB insulated/TO-3P insulated Maximum peak reverse gate voltage VRGM 5 V T =80°C c T =80°C c TO-220AB (non-Insulated) TO-3P (non-Insulated) A1 A2 A2 A2 G A1 2 TO-263 (D PAK) A1 A2 G A2 G (30PTxxH) (30PTxxA) (30PTxxB) A2 1 2 3 TO-220AB (lnsulated) TO-3P (Insulated) A1 A2 G (30PTxxAI) (30PTxxBI) TO-247AB (30PTxxC) (G)3 1(A1) (A2) 2 |
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