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12T10A-BW Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part # 12T10A-BW
Description  TRIACs, 12A Snubberless, Logic Level and Standard
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

12T10A-BW Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

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C
I - II - III
IV
MAX.
25
50
50
100
mA
ALL
ALL
MAX.
I - III - IV
MAX.
40
mA
II
MIN.
MIN.
V
(2)
TM
MAX.
Vt0
(2)
Threshold voltage
MAX.
Dynamic resistance
MAX.
IDRM
IRRM
MAX.
mA
Note 1: Minimum l
is guaranted at 5% of l
max.
GT
GT
Note 2: For both polarities of A2 referenced to A1.
QUADRANT
12Txxxx
V = 12 V, R = 30Ω
D
L
V = V
, R = 3.3KΩ,
D
DRM
L
T = 125°C
j
I = 500 mA
T
I = 1.2 I
G
GT
V = 67% V
, gate open, T = 125°C
D
DRM
j
(dI/dt)c = 5.3 A/ms, T = 125°C
j
1.3
0.2
V
V
mA
V/µs
V/µs
50
50
25
80
80
200
400
5
10
I
= 17 A,
TM
t = 380 µs
P
T = 125°C
j
T = 25°C
j
T = 125°C
j
T = 125°C
j
T = 25°C
j
1.55
0.85
35
5
1
V
V
µA
STATIC CHARACTERISTICS
UNIT
VALUE
UNIT
TEST CONDITIONS
TEST CONDITIONS
SYMBOL
SYMBOL
12Txxxx
Unit
I
(1)
GT
I - II - III
VGT
I - II - III
VGD
I - II - III
(2)
IH
MAX.
I - III
MAX.
mA
II
(2)
dV/dt
MIN.
(dI/dt)c(2)
MIN.
-
A/ms
-
-
IL
MAX.
MIN.
V = 12 V, R = 30Ω
D
L
V = V
, R = 3.3KΩ
D
DRM
L
T = 125°C
j
I = 500 mA
T
I = 1.2 I
G
GT
V = 67% V
gate open ,T = 125°C
D
DRM
j
,
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Without snubber
T = 125°C
j
T = 125°C
j
T = 125°C
j
MAX.
05
10
15
25
20
3.5
1
10
50
1.3
0.2
15
60
20
70
35
80
40
1000
6.5
2.9
12
-
mA
V
V
mA
V/µs
TEST CONDITIONS
QUADRANT
SYMBOL
TW
SW
BW
-
-
35
40
50
60
500
6.5
CW
SNUBBERLESS and Logic level (3 quadrants)
Standard (4 quadrants)
I
(1)
GT
VGT
VGD
(2)
IH
(2)
dV/dt
IL
(2)
(dV/dt)c
(2)
Rd
SEMICONDUCTOR
RoHS
RoHS
B
(T
ºC unless otherwise specified)
J= 25
ELECTRICAL CHARACTERISTICS
(T
ºC unless otherwise specified)
J= 25
ELECTRICAL CHARACTERISTICS
V = V
D
DRM
V = V
R
RRM
12T Series


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