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20T10AI-BW Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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20T10AI-BW Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 5 page  www.nellsemi.com Page 1 of 5 SEMICONDUCTOR 20T Series RoHS RoHS G A2 A1 TRIACs, 20A 1 2 3 TO-220AB (lnsulated) (20TxxAI) TO-220AB (non-Insulated) SYMBOL IT(RMS) RMS on-state current (full sine wave) TO-263/TO-220AB/TO-3P ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A I t 2 2 I t Value for fusing 200 2 A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100ns G GT r 50 IGM Peak gate current 4 PG(AV) Average gate power dissipation 1 PGM 10 W A/µs A A UNIT VALUE 200 210 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F =100 Hz T =125ºC j T =125ºC j T =125ºC j T =20 µs p ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS TO-220AB insulated/TO-3P insulated T = 90ºC c T = 70ºC c A2 A2 G A1 2 TO-263 (D PAK) (20TxxH) FEATURES APPLICATIONS Medium current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-220AB & TO-3P package Clip assembly 20T series are UL certified (File ref: E320098) Packages are RoHS compliant The snubberless concept offer suppression of RC network and it is suitable for applications such as phase control and static switching on inductive or resistive load. MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /V DRM RRM IGT(Q1) 20 A V mA 35 to 50 600 to 1000 20 Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the 20T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards. Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC Tj 1 2 G TO-3P (Insulated) (20TxxBI) (20TxxA) A1 A2 G A2 (20TxxB) Peak gate power dissipation (tp = 20µs) T =125ºC j Sunbberless A2 TO-3P (non-Insulated) |
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