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SEMICONDUCTOR 16T Series RoHS RoHS THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.1 60 °C/W °C/W UNIT VALUE SYMBOL TO-220AB, D²PAK TO-220AB Insulated D²PAK TO-220AB Insulated, TO-220AB 1.2 45 (1) S =1cm² Note 1: S=Copper surface under tab Page 3 of 7 V (2) TM MAX. Vt0 (2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM V = V R RRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max. GT GT Note 2: For both polarities of A2 referenced to A1. I = 22.5 A, TM t = 380 µs P T = 125°C j T = 25°C j T = 125°C j T = 125°C j T = 25°C j 1.55 0.85 25 5 1 V V µA mΩ STATIC CHARACTERISTICS UNIT VALUE TEST CONDITIONS SYMBOL (2) Rd V = V D DRM MIN. (dI/dt)c = 7 A/ms, T = 125°C j V/µs 5 10 (2) (dV/dt)c MIN. V = 67% V , gate open, T = 125°C D DRM j V/µs 200 400 (2) dV/dt II 80 120 MAX. mA I = 1.2 I G GT IL I - III - IV 40 60 (2) IH MAX. I = 500 mA T mA 50 25 ALL V = V , R = 3.3KΩ, D DRM L T = 125°C j 0.2 V VGD ALL 1.3 V VGT V = 12 V, R = 33Ω D L IV 50 100 mA I (1) GT I - II - III MAX. 25 50 C B QUADRANT UNIT TEST CONDITIONS SYMBOL 16Txxxx Standard (4 quadrants) (T ºC unless otherwise specified) J= 25 ELECTRICAL CHARACTERISTICS PRODUCT SELECTOR PART NUMBER VOLTAGE (x x) SENSITIVITY PACKAGE 600 V 50 mA 50 mA 25 mA 35 mA 10 mA 1000 V 16TxxA-B/16TxxAl-B 16TxxA-BW/16TxxAl-BW 16TxxA-C/16TxxAl-C 16TxxA-CW/16TxxAl-CW 16TxxA-SW/16TxxAl-SW TYPE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB Standard Snubberless Standard Snubberless Logic level V V V V V V V V V V 800 V V V V V V 16TxxH-SW 16TxxH-CW V V V V V V 10 mA 35 mA Snubberless D²PAK D²PAK Logic level www.nellsemi.com |
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