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10T06ABW Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part # 10T06ABW
Description  TRIACs, 10A Snubberless and Standard
Download  6 Pages
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

10T06ABW Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

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C
I - II - III
IV
MAX.
25
50
50
100
mA
ALL
ALL
MAX.
I - III - IV
MAX.
40
mA
II
MIN.
MIN.
V
(2)
TM
MAX.
Vt0
(2)
Threshold voltage
MAX.
Dynamic resistance
MAX.
IDRM
IRRM
V
= V
DRM
RRM
MAX.
mA
Note 1: Minimum l
is guaranted at 5% of l
max.
GT
GT
Note 2: For both polarities of A2 referenced to A1.
QUADRANT
10Txxxx
V = 12 V, R = 30Ω
D
L
V = V
, R = 3.3KΩ,
D
DRM
L
T = 125°C
j
I = 500 mA
T
I = 1.2 I
G
GT
V = 67% V
, gate open, T = 125°C
D
DRM
j
(dI/dt)c = 4.4 A/ms, T = 125°C
j
1.3
0.2
V
V
mA
V/µs
V/µs
50
50
25
80
100
200
400
5
10
I
= 14 A,
TM
t = 380 µs
P
T = 125°C
j
T = 25°C
j
T = 125°C
j
T = 125°C
j
T = 25°C
j
1.55
0.85
40
5
1
V
V
µA
STATIC CHARACTERISTICS
UNIT
VALUE
UNIT
TEST CONDITIONS
TEST CONDITIONS
SYMBOL
SYMBOL
10Txxxx
Unit
I
(1)
GT
I - II - III
VGT
I - II - III
VGD
I - II - III
(2)
IH
MAX.
I - III
MAX.
mA
II
(2)
dV/dt
MIN.
(dI/dt)c(2)
MIN.
A/ms
IL
MAX.
MIN.
V = 12 V, R = 30Ω
D
L
V = V
, R = 3.3KΩ
D
DRM
L
T = 125°C
j
I = 500 mA
T
I = 1.2 I
G
GT
V = 67% V
gate open, T = 125°C
D
DRM,
j
Without snubber, T = 125°C
j
MAX.
50
1.3
0.2
50
70
80
1000
9
mA
V
V
mA
V/µs
TEST CONDITIONS
QUADRANT
SYMBOL
BW
35
35
50
60
500
5.5
CW
SNUBBERLESS (3 quadrants)
Standard (4 quadrants)
I
(1)
GT
VGT
VGD
(2)
IH
(2)
dV/dt
IL
(2)
(dV/dt)c
(2)
Rd
SEMICONDUCTOR
10T Series RoHS
RoHS
B
(T
ºC unless otherwise specified)
J= 25
ELECTRICAL CHARACTERISTICS
(T
ºC unless otherwise specified)
J= 25
ELECTRICAL CHARACTERISTICS
Page 2 of 6
www.nellsemi.com


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