8PT08AI-T datasheet(5/7 Pages) NELLSEMI

Part #	8PT08AI-T

Description	Sensitive and Standard SCRs, 8A

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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5 / 7 page

SEMICONDUCTOR

RoHS

Page5of7

8PTSeries

I

(A)

STM

Fig.11 Surge peak on-state current versus

numberofcycles

Fig.12 Non-repetitive surge peak on-state current

andcorrespondingvaluesofl²t

www.nellsemi.com

0.01

0

200

400

1600

1.00

Fig.9 Relative variation of dV/dt immunity

versusgate-cathoderesistance

0

160 180

0.0

2.5

5.0

7.5

0.0

0.2

4.0

5.0

5.5

-20

0

60

20

-40

40

3.5

4.5

100

140

80

120

0.4

dV/dt[R

]/dV/dt[R

=220Ω]

GK

6.0

Fig.7 Relative variation of gate trigger and

holdingcurrentversusjunction

temperature

Fig.8 Relative variation of holding current

versusgate-cathoderesistance

(typicalvalues)

dV/dt[C

]/dV/dt[R

=220Ω]

GK

Tj(°C)

IGT

l &I

H

L

5mA&15mA

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

IGT=200µA

T =25 C

j

R

(KΩ)

GK

1

E-2

1

E-1

1

E+0

1

E+1

R

(KΩ)

GK

T =125 C

j

°

V =0.67XV

D

DRM

600

800 1000 1200 1400

1800 2000

0.10

10.00

V =0.67XV

D

DRM

T =125 C

j

R

=220Ω

GK

C

(nF)

GK

20

40

60

80

120 140

200 220

100

10.0

12.5

15.0

t =10ms

p

Onecycle

Nonrepetitive

T initial=25 C

j

°

Repetitive

Tc=110 C

°

Numberofcycles

0.01

10

0

40

30

60

70

90

1

100

1000

20

50

10

80

100

tp(ms)

Sinusoidalpulsewith widthtp<10ms

Tjinital=25 C

I²t

ITSM

dI/dtIimitation

0.10

1.00

10.00

10

100

1000

I [R

]/I [R

=1KΩ]

H

GK

H

GK

I

,I ,I [Tj]/I

,I ,I [Tj=25 C]

GT H L

°

3.0

2.5

2.0

1.5

1.0

0.5

0.0

(typicalvalues)forI =200µA

G

Fig.1 Relative variation of dV/dt immunity

0

versusgate-cathodecapacitance

(typicalvalues)forI

=200µA

GT

I

(A),I²t(A²s)

TSM

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