-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

I

,I ,I [T ] /

GT H L

j

I

,I ,I [T =25°C ]

GT H L

j

0.1

1.0

10.0

100.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0

1

2

3

4

5

6

(dI/dt)c [T ] /

pecified]

j

(dI/dt)c [T s

j

SEMICONDUCTOR

RoHS

Fig.7 Relative variation of gate trigger current,holding

current and latching current versus junction

temperature (typical values)

Fig.8 Relative variation of critical rate of decrease

of main current versus (dV/dt)c (typical values)

Fig.9 Relative variation of critical rate of decrease of

main current versus junction temperature

Page 5 of 6

lGT

I &I

H

L

T (°C)

j

C

B

BW/CW

(dV/dt)c (V/µs)

T (°C)

j

0

25

50

75

100

125

www.nellsemi.com