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www.nellsemi.com Page 2 of 7 C I - II - III IV MAX. 25 50 50 100 mA ALL ALL MAX. I - III - IV MAX. 35 mA II MIN. MIN. V (2) TM MAX. Vt0 (2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM MAX. mA Note 1: minimum l is guaranted at 5% of l max. GT GT Note 2: for both polarities of A2 referenced to A1. QUADRANT 8Txxxx V = 12 V, R = 30Ω D L V = V , R = 3.3KΩ, D DRM L T = 125°C j I = 200 mA T I = 1.2 I G GT V = 67% V , gate open, T = 125°C D DRM j (dI/dt)c = 3.5 A/ms, T = 125°C j 1.3 0.2 V V mA V/µs V/µs 50 50 25 60 80 200 400 5 10 I = 11 A, TM t = 380 µs P T = 125°C j T = 25°C j T = 125°C j T = 125°C j T = 25°C j 1.55 0.85 50 5 1 V V µA mΩ STATIC CHARACTERISTICS UNIT VALUE UNIT TEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL 8Txxxx Unit I (1) GT I - II - III VGT I - II - III VGD I - II - III (2) IH MAX. I - III MAX. mA II (2) dV/dt MIN. (dI/dt)c(2) MIN. - A/ms - - IL MAX. MIN. V = 12 V, R = 30Ω D L V = V , R = 3.3KΩ D DRM L T = 125°C j I = 100 mA T I = 1.2 I G GT V = 67% V gate open ,T = 125°C D DRM j , (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°C j T = 125°C j T = 125°C j MAX. 05 10 15 25 20 3.5 1.5 10 50 1.3 0.2 15 60 20 70 35 80 40 1000 5.4 2.8 7 - mA V V mA V/µs TEST CONDITIONS QUADRANT SYMBOL TW SW BW - - 35 40 50 60 400 4.5 CW SNUBBERLESS and Logic level (3 quadrants) Standard (4 quadrants) I (1) GT VGT VGD (2) IH (2) dV/dt IL (2) (dV/dt)c (2) Rd SEMICONDUCTOR 8T Series RoHS RoHS B (T ºC unless otherwise specified) J= 25 ELECTRICAL CHARACTERISTICS (T ºC unless otherwise specified) J= 25 ELECTRICAL CHARACTERISTICS V = V D DRM V = V R RRM |
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